TPCA8010-H(TE12LQM
MOSFET N-CH 200V 5.5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8010-H-TE12LQM is an N-Channel MOSFET from the À-MOSV series. This device offers a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 5.5A at 25°C (Ta). It features a low on-resistance (Rds On) of 450mOhm maximum at 2.7A and 10V Vgs. The MOSFET is housed in an 8-SOP Advance (5x5) package, suitable for surface mounting and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 10nC maximum at 10V and input capacitance (Ciss) of 600pF maximum at 10V. The maximum operating junction temperature is 150°C. This component is utilized in power supply and industrial applications.
Additional Information
Series: À-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
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