TPCA8010-H(TE12L,Q
MOSFET N-CH 200V 5.5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPCA8010-H-TE12L-Q is an N-Channel MOSFET from the TMOSV series. This surface mount component offers a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 5.5A at 25°C ambient. The device features a maximum on-resistance (Rds On) of 450mOhm at 2.7A and 10V gate-source voltage. With a typical gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 600pF at 10V, it is suitable for power switching applications. The package is an 8-SOP Advance (5x5), supplied on tape and reel. Power dissipation capabilities include 1.6W ambient and 45W case temperature. Operating junction temperature is rated up to 150°C. This MOSFET finds application in power supply circuits and general-purpose switching in industrial and automotive sectors.
Additional Information
Series: À-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
Request a Quote
Clients Also Buy
SSM3K2615TU,LF
MOSFET N-CH 60V 2A UFM
TPCA8010-H(TE12LQM
MOSFET N-CH 200V 5.5A 8SOP
TPHR7904PB,L1XHQ
MOSFET N-CH 40V 150A 8SOP
