TPCA8009-H(TE12L,Q
MOSFET N-CH 150V 7A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8009-H-TE12L-Q is a high-performance N-Channel MOSFET designed for demanding applications. This device features a drain-source breakdown voltage of 150 V and a continuous drain current capability of 7 A at 25°C (Ta), with a maximum power dissipation of 1.6 W (Ta) and 45 W (Tc). The TPCA8009-H-TE12L-Q offers a low on-resistance of 350 mOhm maximum at 3.5 A and 10 V gate-source voltage. It is packaged in an 8-SOP Advance (5x5) surface mount configuration, supplied on tape and reel. Key electrical characteristics include a gate charge of 10 nC maximum and input capacitance of 600 pF maximum, both specified at 10 V. The maximum gate-source voltage is ±20 V, and the threshold gate-source voltage is 4 V maximum at 1 mA. This component is suitable for use in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
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