TPCA8005-H(TE12LQM
MOSFET N-CH 30V 27A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TPCA8005-H-TE12LQM, is a 30V device in an 8-SOP Advance (5x5) surface mount package. This MOSFET offers a continuous drain current of 27A (Ta) at 25°C and a low on-resistance of 9mOhm at 14A, 10V. Featuring a gate charge (Qg) of 24 nC (max) at 10V and input capacitance (Ciss) of 1395 pF (max) at 10V, it is suitable for applications requiring efficient switching. The device operates at a maximum junction temperature of 150°C and supports a gate-source voltage (Vgs) up to ±20V. Power dissipation is rated at 1.6W (Ta) and 45W (Tc). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1395 pF @ 10 V |
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