TPCA8003-H(TE12LQM
MOSFET N-CH 30V 35A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPCA8003-H-TE12LQM is a high-performance N-Channel MOSFET designed for demanding applications. It features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 35A at 25°C. The device offers a low on-resistance (Rds On) of 6.6mOhm at 18A and 10V, minimizing conduction losses. With a maximum gate charge (Qg) of 25 nC at 10V and an input capacitance (Ciss) of 1465 pF at 10V, it ensures efficient switching characteristics. The TPCA8003-H-TE12LQM supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. It is supplied in a compact 8-SOP Advance (5x5) package mounted on tape and reel. This MOSFET is suitable for power management solutions across automotive, industrial, and consumer electronics sectors, capable of dissipating up to 1.6W (Ta) or 45W (Tc). The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1465 pF @ 10 V |
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