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TPC8A05-H(TE12L,QM

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TPC8A05-H(TE12L,QM

MOSFET N-CH 30V 10A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8A05-H-TE12L-QM is an N-Channel MOSFET from the U-MOSV-H series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Ta). With a maximum Rds(on) of 13.3mOhm at 5A and 10V, it offers efficient power switching. The MOSFET includes an integrated Schottky diode for improved performance. Key parameters include a gate charge (Qg) of 15 nC (max) at 10V and input capacitance (Ciss) of 1700 pF (max) at 10V. The TPC8A05-H-TE12L-QM is supplied in an 8-SOP package suitable for surface mounting and operates at junction temperatures up to 150°C. It is commonly utilized in power supply circuits, motor control, and automotive applications.

Additional Information

Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs13.3mOhm @ 5A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V

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