TPC8A05-H(TE12L,QM
MOSFET N-CH 30V 10A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8A05-H-TE12L-QM is an N-Channel MOSFET from the U-MOSV-H series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Ta). With a maximum Rds(on) of 13.3mOhm at 5A and 10V, it offers efficient power switching. The MOSFET includes an integrated Schottky diode for improved performance. Key parameters include a gate charge (Qg) of 15 nC (max) at 10V and input capacitance (Ciss) of 1700 pF (max) at 10V. The TPC8A05-H-TE12L-QM is supplied in an 8-SOP package suitable for surface mounting and operates at junction temperatures up to 150°C. It is commonly utilized in power supply circuits, motor control, and automotive applications.
Additional Information
Series: U-MOSV-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 5A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 10 V |