TPC8A02-H(TE12L,Q)
MOSFET N-CH 30V 16A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8A02-H-TE12L-Q- is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current of 16A (Ta) at 25°C. The low on-resistance of 5.6mOhm at 8A, 10V ensures efficient power transfer. With a maximum junction temperature of 150°C and a power dissipation of 1W (Ta), it is suitable for high-power density designs. The 8-SOP package with surface mount capability, and a gate charge of 34 nC @ 10V, makes it a versatile component for power management circuits in automotive and industrial sectors. Input capacitance (Ciss) is a maximum of 1970 pF @ 10V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 10 V |
Request a Quote
Clients Also Buy
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
TPC8066-H,LQ(S
MOSFET N-CH 30V 11A 8SOP
TPH1R306PL,L1Q
MOSFET N-CH 60V 100A 8SOP
