TPC8126,LQ(CM
MOSFET P-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8126-LQ-CM is a P-channel MOSFET from the U-MOSVI series. This device features a 30V drain-source voltage rating and a continuous drain current capability of 11A at 25°C. The on-resistance (Rds On) is specified at a maximum of 10mOhm at 5.5A and 10V gate-source voltage. With a gate charge (Qg) of 56 nC maximum at 10V and input capacitance (Ciss) of 2400 pF maximum at 10V, it offers efficient switching characteristics. The component is housed in an 8-SOP package, measuring 5.5x6.0mm, and is designed for surface mounting. Its maximum power dissipation is 1W. This MOSFET is utilized in applications requiring robust power switching, including automotive systems and industrial power management. The operating temperature range extends up to 150°C.
Additional Information
Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 10 V |