TPC8115(TE12L,Q,M)
MOSFET P-CH 20V 10A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part of the U-MOSIV series, TPC8115-TE12L-Q-M-. This 20V device offers a continuous drain current of 10A (Ta) with a maximum power dissipation of 1W (Ta) in a surface mount 8-SOP package. Key parameters include a low Rds(on) of 10mOhm at 5A and 4.5V, and a gate charge of 115 nC at 5V. Input capacitance (Ciss) is 9130 pF at 10V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±8V, with a threshold voltage (Vgs(th)) of 1.2V at 200µA. This component is utilized in applications such as power management and consumer electronics. The TPC8115-TE12L-Q-M- is supplied in Tape & Reel packaging.
Additional Information
Series: U-MOSIVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 10 V |
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