TPC8113(TE12L,Q)
MOSFET P-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8113-TE12L-Q- is a P-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C. The device exhibits a low on-resistance (Rds On) of 10mOhm maximum at 5.5A and 10V gate-source voltage. With a maximum power dissipation of 1W and an operating junction temperature of 150°C, it is well-suited for power management in automotive and industrial systems. The TPC8113-TE12L-Q- is supplied in a compact 8-SOP (5.5x6.0) package, facilitating surface mounting. Key parameters include a gate charge (Qg) of 107 nC maximum at 10V and input capacitance (Ciss) of 4500 pF maximum at 10V. Drive voltages range from 4V to 10V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 10 V |
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