TPC8111(TE12L,Q,M)
MOSFET P-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8111-TE12L-Q-M- is a P-Channel MOSFET designed for demanding applications. This surface mount component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C (Ta). The Rds On is specified at a maximum of 12mOhm at 5.5A, 10V. It offers a gate charge (Qg) of 107 nC at 10V and input capacitance (Ciss) of 5710 pF at 10V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). Packaged in an 8-SOP (5.5x6.0) format, it is supplied on tape and reel. This MOSFET is utilized in various industrial and automotive systems requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5710 pF @ 10 V |
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