TPC8110(TE12L,Q,M)
MOSFET P-CH 40V 8A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8110-TE12L-Q-M- is a P-channel MOSFET from the U-MOSIII series. This device features a 40V drain-source breakdown voltage and a continuous drain current of 8A at 25°C. The on-resistance (Rds On) is specified at a maximum of 25mOhm at 4A, 10V. It supports gate drive voltages from 4V to 10V, with a maximum gate-source voltage of ±20V. Key input characteristics include a Ciss of 2180pF (max) at 10V Vds and a Qg of 48nC (max) at 10V Vgs. The device offers a maximum power dissipation of 1W under typical conditions and operates at junction temperatures up to 150°C. It is supplied in an 8-SOP package with a 5.5x6.0mm footprint and is delivered on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 10 V |
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