TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8109-TE12L- is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C. The TPC8109-TE12L- exhibits a low on-resistance (Rds On) of 20mOhm at 5A and 10V, ensuring efficient power handling. Key electrical characteristics include a gate charge (Qg) of 45 nC maximum at 10V and an input capacitance (Ciss) of 2260 pF maximum at 10V. The threshold voltage (Vgs(th)) is 2V maximum at 1mA. This MOSFET is provided in an 8-SOP (5.5x6.0) surface mount package, specifically in Cut Tape (CT) packaging. Its robust specifications make it suitable for use in power management circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 10 V |
Request a Quote
Clients Also Buy
TPC8066-H,LQ(S
MOSFET N-CH 30V 11A 8SOP
TPH1R306PL,L1Q
MOSFET N-CH 60V 100A 8SOP
SSM3K15AFU,LF
MOSFET N-CH 30V 100MA USM
