TPC8092,LQ(S
MOSFET N-CH 30V 15A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8092-LQ-S is an N-Channel MOSFET from the U-MOSVII series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. The low on-resistance is specified at 9mOhm maximum at 7.5A and 10V gate-source voltage. It offers a gate charge (Qg) of 25 nC maximum at 10V and an input capacitance (Ciss) of 1800 pF maximum at 10V. Designed for surface mounting, this device is housed in an 8-SOP package. The maximum power dissipation is 1W (Ta) with an operating junction temperature of 150°C. This MOSFET is suitable for applications in power management and automotive sectors.
Additional Information
Series: U-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 10 V |