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TPC8092,LQ(S

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TPC8092,LQ(S

MOSFET N-CH 30V 15A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8092-LQ-S is an N-Channel MOSFET from the U-MOSVII series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. The low on-resistance is specified at 9mOhm maximum at 7.5A and 10V gate-source voltage. It offers a gate charge (Qg) of 25 nC maximum at 10V and an input capacitance (Ciss) of 1800 pF maximum at 10V. Designed for surface mounting, this device is housed in an 8-SOP package. The maximum power dissipation is 1W (Ta) with an operating junction temperature of 150°C. This MOSFET is suitable for applications in power management and automotive sectors.

Additional Information

Series: U-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs9mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 200µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 10 V

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