TPC8066-H,LQ(S
MOSFET N-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8066-H-LQ-S is an N-Channel MOSFET from the U-MOSVII-H series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. With a maximum on-resistance (Rds On) of 16mOhm at 5.5A and 10V Vgs, it offers efficient power switching. The device is housed in an 8-SOP package, suitable for surface mount applications, and operates at junction temperatures up to 150°C. Key parameters include a gate charge (Qg) of 15 nC at 10V Vgs and input capacitance (Ciss) of 1100 pF at 10V Vds. This MOSFET is utilized in power management, automotive, and industrial applications requiring robust switching performance.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |