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TPC8065-H,LQ(S

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TPC8065-H,LQ(S

MOSFET N-CH 30V 13A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8065-H-LQ-S is a 30V N-Channel MOSFET from the U-MOSVII-H series. This component features a low on-resistance of 11.6mOhm at 6.5A and 10V Vgs, with a continuous drain current of 13A (Ta). The device offers a maximum power dissipation of 1W (Ta) and operates within an ambient temperature range of 150°C (TJ). Key parameters include a gate charge of 20 nC @ 10V and input capacitance of 1350 pF @ 10V. Supplied in a surface mount 8-SOP (0.154", 3.90mm Width) package, this MOSFET is suitable for applications requiring efficient power switching. The TPC8065-H-LQ-S is commonly utilized in power management solutions, automotive electronics, and industrial control systems.

Additional Information

Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs11.6mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 200µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 10 V

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