TPC8065-H,LQ(S
MOSFET N-CH 30V 13A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8065-H-LQ-S is a 30V N-Channel MOSFET from the U-MOSVII-H series. This component features a low on-resistance of 11.6mOhm at 6.5A and 10V Vgs, with a continuous drain current of 13A (Ta). The device offers a maximum power dissipation of 1W (Ta) and operates within an ambient temperature range of 150°C (TJ). Key parameters include a gate charge of 20 nC @ 10V and input capacitance of 1350 pF @ 10V. Supplied in a surface mount 8-SOP (0.154", 3.90mm Width) package, this MOSFET is suitable for applications requiring efficient power switching. The TPC8065-H-LQ-S is commonly utilized in power management solutions, automotive electronics, and industrial control systems.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |