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TPC8062-H,LQ(CM

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TPC8062-H,LQ(CM

MOSFET N-CH 30V 18A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8062-H-LQ-CM is an N-Channel MOSFET from the U-MOSVII-H series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current of 18A at 25°C. The device offers a low on-resistance (Rds On) of 5.8mOhm maximum at 9A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 34 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2900 pF maximum at 10V Vds. Designed for surface mounting, it is housed in an 8-SOP package. This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W. The TPC8062-H-LQ-CM is suitable for applications requiring efficient power switching in areas such as automotive and industrial power management.

Additional Information

Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs5.8mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 300µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 10 V

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