TPC8062-H,LQ(CM
MOSFET N-CH 30V 18A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8062-H-LQ-CM is an N-Channel MOSFET from the U-MOSVII-H series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current of 18A at 25°C. The device offers a low on-resistance (Rds On) of 5.8mOhm maximum at 9A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 34 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2900 pF maximum at 10V Vds. Designed for surface mounting, it is housed in an 8-SOP package. This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W. The TPC8062-H-LQ-CM is suitable for applications requiring efficient power switching in areas such as automotive and industrial power management.
Additional Information
Series: U-MOSVII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 300µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |