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TPC8048-H(TE12L,Q)

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TPC8048-H(TE12L,Q)

MOSFET N-CH 60V 16A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage TPC8048-H-TE12L-Q- is an N-channel MOSFET from the U-MOSVI-H series. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C with a maximum power dissipation of 1W under the same conditions. The on-resistance (Rds On) is specified at a maximum of 6.9mOhm when driven at 8A with a 10V gate-source voltage. Key parameters include a gate charge (Qg) of 87 nC (max) at 10V and input capacitance (Ciss) of 7540 pF (max) at 10V. Operating temperature reaches 150°C (TJ). The component is housed in an 8-SOP package with a 5.5x6.0mm footprint, suitable for surface mounting and supplied on cut tape. This MOSFET is utilized in applications requiring efficient power switching, such as power supplies and motor control.

Additional Information

Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs6.9mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7540 pF @ 10 V

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