TPC8048-H(TE12L,Q)
MOSFET N-CH 60V 16A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8048-H-TE12L-Q- is an N-channel MOSFET from the U-MOSVI-H series. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C with a maximum power dissipation of 1W under the same conditions. The on-resistance (Rds On) is specified at a maximum of 6.9mOhm when driven at 8A with a 10V gate-source voltage. Key parameters include a gate charge (Qg) of 87 nC (max) at 10V and input capacitance (Ciss) of 7540 pF (max) at 10V. Operating temperature reaches 150°C (TJ). The component is housed in an 8-SOP package with a 5.5x6.0mm footprint, suitable for surface mounting and supplied on cut tape. This MOSFET is utilized in applications requiring efficient power switching, such as power supplies and motor control.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 10 V |
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