TPC8042(TE12L,Q,M)
MOSFET N-CH 30V 18A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC8042-TE12L-Q-M- is a surface-mount N-Channel MOSFET from the U-MOSIV series. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 18A at 25°C (Ta), with a maximum power dissipation of 1W (Ta). The Rds On is specified at a maximum of 3.4mOhm at 9A and 10V gate drive. Gate charge (Qg) is 56 nC maximum at 10V, and input capacitance (Ciss) is 2900 pF maximum at 10V. Drive voltage options range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. This component is supplied in an 8-SOP (5.5x6.0) package, presented on tape and reel. Applications for this device include power management, consumer electronics, and industrial power supplies.
Additional Information
Series: U-MOSIVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
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