TPC8035-H(TE12L,QM
MOSFET N-CH 30V 18A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, TPC8035-H-TE12L-QM from the U-MOSVI-H series. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 18A at 25°C ambient. The TPC8035-H-TE12L-QM offers a low on-resistance of 3.2mOhm at 9A, 10V. It is packaged in an 8-SOP (5.5x6.0) surface mount configuration, supplied on tape and reel. Key electrical characteristics include a maximum gate charge of 82 nC at 10V and an input capacitance of 7800 pF at 10V. The operating junction temperature range extends to 150°C. This component is suitable for applications in power management and automotive sectors.
Additional Information
Series: U-MOSVI-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 10 V |
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