TPC8032-H(TE12LQM)
MOSFET N-CH 30V 15A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TPC8032-H-TE12LQM-, an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 15A at 25°C (Ta). This device features a low on-resistance of 6.5mOhm at 7.5A, 10V (Id, Vgs) and a Gate Charge (Qg) of 33 nC maximum at 10 V (Vgs). The input capacitance (Ciss) is 2846 pF maximum at 10 V (Vds). Packaged in an 8-SOP (5.5x6.0) surface mount configuration, suitable for tape and reel (TR) distribution, this MOSFET operates efficiently up to 150°C (TJ). Its specifications make it suitable for applications in power management and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2846 pF @ 10 V |
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