TPC8031-H(TE12LQM)
MOSFET N-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8031-H-TE12LQM- is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Ta). The low on-resistance of 13.3mOhm at 5.5A, 10V (Id, Vgs) ensures efficient power transfer. Key parameters include a gate charge of 21 nC (Max) at 10V and an input capacitance of 2150 pF (Max) at 10V. The TPC8031-H-TE12LQM- is housed in an 8-SOP (5.5x6.0) surface-mount package, suitable for automated assembly. It operates reliably up to a junction temperature of 150°C. This MOSFET technology is utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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