TPC8026(TE12L,Q,M)
MOSFET N-CH 30V 13A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TPC8026-TE12L-Q-M-, offers a 30V drain-source voltage and a continuous drain current of 13A at 25°C (Ta). This device features a low on-resistance of 6.6mOhm maximum at 6.5A and 10V Vgs. The TPC8026-TE12L-Q-M- is housed in an 8-SOP (5.5x6.0) surface mount package, providing a maximum power dissipation of 1W (Ta). Key electrical parameters include a gate charge of 42 nC maximum at 10V Vgs and input capacitance of 1800 pF maximum at 10V Vds. The device operates within a temperature range of 150°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage of 2.5V maximum at 1mA. This MOSFET is suitable for applications in power management and switching circuits across various industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 10 V |
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