TPC8022-H(TE12LQ,M
MOSFET N-CH 40V 7.5A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8022-H-TE12LQ-M is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 7.5A at 25°C. The Rds(On) is specified at a maximum of 27mOhm at 3.8A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 11 nC maximum at 10V Vgs and Input Capacitance (Ciss) of 650 pF maximum at 10V Vds. The device operates within a junction temperature range of 150°C and has a maximum power dissipation of 1W (Ta). It is available in an 8-SOP package (5.5x6.0mm) and is supplied on Tape & Reel. This MOSFET is suitable for use in industrial power management and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 10 V |
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