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TPC8021-H(TE12LQ,M

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TPC8021-H(TE12LQ,M

MOSFET N-CH 30V 11A 8SOP

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Toshiba Semiconductor and Storage TPC8021-H-TE12LQ-M is an N-Channel MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at a maximum of 17mOhm at 5.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 11 nC and input capacitance (Ciss) of 640 pF, both measured at 10V. The device operates within an ambient temperature range of 150°C (TJ). This MOSFET is housed in a compact 8-SOP (5.5x6.0) surface mount package, supplied on tape and reel. It is suitable for a variety of applications including power management, battery charging circuits, and general-purpose switching in consumer electronics and industrial control systems. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is 2.3V at 1mA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs17mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 10 V

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