TPC8021-H(TE12LQ,M
MOSFET N-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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The Toshiba Semiconductor and Storage TPC8021-H-TE12LQ-M is an N-Channel MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at a maximum of 17mOhm at 5.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 11 nC and input capacitance (Ciss) of 640 pF, both measured at 10V. The device operates within an ambient temperature range of 150°C (TJ).
This MOSFET is housed in a compact 8-SOP (5.5x6.0) surface mount package, supplied on tape and reel. It is suitable for a variety of applications including power management, battery charging circuits, and general-purpose switching in consumer electronics and industrial control systems. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is 2.3V at 1mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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