TPC8018-H(TE12LQM)
MOSFET N-CH 30V 18A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8018-H-TE12LQM is an N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 18A at 25°C (Ta). With a low on-resistance of 4.6mOhm at 9A and 10V Vgs, it minimizes conduction losses. The TPC8018-H-TE12LQM offers a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.3V. Key parameters include a gate charge (Qg) of 38 nC and input capacitance (Ciss) of 2265 pF, both measured at 10V Vgs and 10V Vds respectively. The component is housed in an 8-SOP (5.5x6.0) package, suitable for surface mounting, and operates within a temperature range of 150°C (TJ). Power dissipation is rated at 1W (Ta). This MOSFET is commonly employed in power management systems, automotive electronics, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2265 pF @ 10 V |
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