TPC8014(TE12L,Q,M)
MOSFET N-CH 30V 11A 8SOPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC8014-TE12L-Q-M- is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C. The low on-resistance of 14mOhm at 10Vgs and 5.5A Id ensures minimal conduction losses. With a gate charge of 39 nC (max) and input capacitance of 1860 pF (max), it facilitates fast switching performance. The MOSFET is housed in a compact 8-SOP package, suitable for surface mounting. Typical applications include power management, motor control, and battery charging systems within automotive and industrial sectors. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V |
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