TPC6113(TE85L,F,M)
MOSFET P-CH 20V 5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC6113-TE85L-F-M- is a P-Channel MOSFET from the U-MOSVI series. This component features a 20V drain-source voltage rating and a continuous drain current capability of 5A at 25°C (Ta). The device exhibits a maximum on-resistance of 55mOhms at 2.5A, 4.5V. It is housed in a VS-6 (2.9x2.8) surface mount package, specifically SOT-23-6 Thin. Key parameters include a gate charge of 10nC at 5V and an input capacitance of 690pF at 10V. The operating junction temperature range extends to 150°C. This MOSFET is suitable for applications in power management and consumer electronics.
Additional Information
Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 10 V |