TPC6111(TE85L,F,M)
MOSFET P-CH 20V 5.5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel U-MOSV series MOSFET, part number TPC6111-TE85L-F-M-. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C. The TPC6111-TE85L-F-M- offers a maximum on-resistance (Rds On) of 40mOhm at 2.8A drain current and 4.5V gate-source voltage. With a maximum power dissipation of 700mW (Ta), it is designed for surface mounting in a VS-6 (2.9x2.8) package, supplied on tape and reel. Key parameters include a gate charge of 10 nC at 5V and input capacitance of 700 pF at 10V Vds. This component is suitable for applications in consumer electronics and power management.
Additional Information
Series: U-MOSVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V |
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