TPC6110(TE85L,F,M)
MOSFET P-CH 30V 4.5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TPC6110-TE85L-F-M- is a P-Channel MOSFET from the U-MOSVI series. This device features a 30V drain-to-source voltage and a continuous drain current of 4.5A at 25°C. With a low on-resistance of 56mOhm maximum at 2.2A and 10V, this MOSFET is suitable for applications requiring efficient power switching. Key electrical parameters include a maximum gate charge (Qg) of 14 nC and a maximum input capacitance (Ciss) of 510 pF, both specified at 10V. The device offers a power dissipation of 700mW at 25°C and operates at junction temperatures up to 150°C. Packaged in a VS-6 (2.9x2.8) SOT-23-6 Thin (TSOT-23-6) format, it is supplied on tape and reel. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |