TPC6109-H(TE85L,FM
MOSFET P-CH 30V 5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET TPC6109-H-TE85L-FM, part of the U-MOSIII-H series, offers a 30V drain-source voltage and 5A continuous drain current at 25°C. This surface mount device features a low on-resistance of 59mOhm at 2.5A and 10V Vgs, with a maximum gate charge of 12.3 nC. The VS-6 package, a compact 2.9x2.8mm footprint, is supplied on tape and reel. Key parameters include a maximum power dissipation of 700mW and an operating junction temperature of 150°C. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: U-MOSIII-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 10 V |
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