TPC6107(TE85L,F,M)
MOSFET P-CH 20V 4.5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC6107-TE85L-F-M- is a P-Channel MOSFET from the U-MOSIV series. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 55mOhm at 2.2A and 4.5V Vgs. With a gate charge (Qg) of 9.8 nC max at 5V and input capacitance (Ciss) of 680 pF max at 10V Vds, it offers efficient switching characteristics. The component is housed in a VS-6 (2.9x2.8) package, suitable for surface mounting, and operates at temperatures up to 150°C (TJ). Power dissipation is rated at 700mW (Ta). This MOSFET is commonly utilized in power management, battery charging, and load switching applications across consumer electronics and industrial automation. It is supplied on tape and reel.
Additional Information
Series: U-MOSIVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
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