TPC6104(TE85L,F,M)
MOSFET P-CH 20V 5.5A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC6104-TE85L-F-M- is a P-Channel MOSFET from the U-MOSIII series, designed for efficient power switching. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 40mOhm when driving 2.8A with a 4.5V gate-source voltage. With a gate charge (Qg) of 19 nC at 5V and input capacitance (Ciss) of 1430 pF at 10V, this device is suitable for various switching applications. The TPC6104-TE85L-F-M- is housed in a VS-6 (2.9x2.8) SOT-23-6 Thin package, ideal for surface mounting. It operates over an extended temperature range up to 150°C (TJ) and has a maximum power dissipation of 700mW. This MOSFET finds application in consumer electronics and industrial automation.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 10 V |
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