TPC6012(TE85L,F,M)
MOSFET N-CH 20V 6A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC6012-TE85L-F-M- is an N-channel MOSFET from the U-MOSIV series. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The Rds(On) is specified at 20mOhm maximum for an Id of 3A and Vgs of 4.5V. Key parameters include a gate charge (Qg) of 9nC maximum at 5V, and input capacitance (Ciss) of 630pF maximum at 10V. The MOSFET is housed in a VS-6 package (SOT-23-6 Thin, TSOT-23-6) and is supplied on tape and reel. With a maximum power dissipation of 700mW (Ta) and an operating junction temperature of 150°C, this component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |