TPC6011(TE85L,F,M)
MOSFET N-CH 30V 6A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TPC6011-TE85L-F-M-, an N-Channel MOSFET from the U-MOS IV series. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 6A at 25°C. The device offers a low on-resistance of 20mOhm maximum at 3A and 10V Vgs. With a gate charge (Qg) of 14 nC maximum at 10V Vgs and input capacitance (Ciss) of 640 pF maximum at 10V Vds, it is designed for efficient switching. The TPC6011-TE85L-F-M- is housed in a VS-6 (2.9x2.8) package, specifically a SOT-23-6 Thin / TSOT-23-6, suitable for surface mounting. Its maximum power dissipation is rated at 700mW (Ta). This MOSFET is utilized in power management applications across various industries, including automotive and industrial electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |