TPC6010-H(TE85L,FM
MOSFET N-CH 60V 6.1A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC6010-H-TE85L-FM is a N-Channel MOSFET from the U-MOSVI-H series. This device features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 6.1 A at 25°C, with a maximum power dissipation of 700 mW (Ta). The on-resistance (Rds On) is 59 mOhm maximum at 3.1 A and 10 V. Gate drive voltages range from 4.5 V to 10 V. Key electrical parameters include a gate charge (Qg) of 12 nC maximum at 10 V and input capacitance (Ciss) of 830 pF maximum at 10 V. The TPC6010-H-TE85L-FM utilizes a surface mount VS-6 package (2.9x2.8) and is supplied on tape and reel. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |