TPC6009-H(TE85L,FM
MOSFET N-CH 40V 5.3A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC6009-H-TE85L-FM is an N-Channel MOSFET from the U-MOSVI-H series. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 5.3A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 81mOhm maximum at 2.7A and 10V gate-source voltage. It operates with a gate drive voltage range of 4.5V to 10V. Key parameters include a maximum power dissipation of 700mW (Ta) and a maximum junction temperature of 150°C. The input capacitance (Ciss) is rated at 290pF maximum at 10V, with a gate charge (Qg) of 4.7nC maximum at 10V. Packaged in a VS-6 (2.9x2.8) SOT-23-6 Thin, TSOT-23-6 format, this MOSFET is supplied on tape and reel. This component is utilized in applications such as power management and general-purpose switching.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |