TPC6008-H(TE85L,FM
MOSFET N-CH 30V 5.9A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TPC6008-H-TE85L-FM is an N-Channel MOSFET from the U-MOSVI-H series. It features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.9 A at 25°C (Ta). This device offers a maximum on-resistance (Rds On) of 60 mOhm at 3 A and 10 V Vgs. The gate charge (Qg) is a maximum of 4.8 nC at 10 V. Designed for surface mounting, this MOSFET is housed in a VS-6 (2.9x2.8) package, specifically a SOT-23-6 Thin or TSOT-23-6. It operates within a temperature range of -55°C to 150°C (TJ). The TPC6008-H-TE85L-FM is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |