TPC6006-H(TE85L,F)
MOSFET N-CH 40V 3.9A VS-6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TPC6006-H-TE85L-F- is a 40V N-Channel MOSFET from the U-MOSIII-H series. This device features a continuous drain current of 3.9A (Ta) and a maximum power dissipation of 700mW (Ta). With a low ON-resistance of 75mOhm @ 1.9A, 10V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 4.4 nC @ 10 V and input capacitance (Ciss) of 251 pF @ 10 V. The TPC6006-H-TE85L-F- is supplied in a VS-6 (2.9x2.8) package, specifically SOT-23-6 Thin, and is available on Tape & Reel (TR). This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: U-MOSIII-HRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 251 pF @ 10 V |
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