TK9P65W,RQ
MOSFET N-CH 650V 9.3A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV series TK9P65W-RQ is an N-channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 9.3A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 560mOhm maximum at 4.6A and 10V gate drive. With a maximum power dissipation of 80W (Tc), it utilizes a DPAK (TO-252-3) surface mount package. Key electrical characteristics include a gate charge (Qg) of 20nC maximum at 10V and an input capacitance (Ciss) of 700pF maximum at 300V. The operating junction temperature range is up to 150°C. This MOSFET is commonly found in power supply units, power factor correction circuits, and lighting applications.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 350µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 300 V |
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