TK9J90E,S1E
MOSFET N-CH 900V 9A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Supplier Device Package | TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
Request a Quote
Clients Also Buy
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
TPC8066-H,LQ(S
MOSFET N-CH 30V 11A 8SOP
TPH1R306PL,L1Q
MOSFET N-CH 60V 100A 8SOP
