TK8Q60W,S1VQ
MOSFET N-CH 600V 8A IPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 600 V 8A (Ta) 80W (Tc) Through Hole IPAK
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 400µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 300 V |
Request a Quote
Clients Also Buy
TK31V60W5,LVQ
MOSFET N-CH 600V 30.8A 4DFN
TK5P60W,RVQ
MOSFET N CH 600V 5.4A DPAK
TK14G65W,RQ
MOSFET N-CH 650V 13.7A D2PAK
