TK8A60DA(STA4,Q,M)
MOSFET N-CH 600V 7.5A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK8A60DA-STA4-Q-M-, an N-Channel MOSFET from the T-MOSVII series. This device features a drain-source breakdown voltage (Vdss) of 600V and a continuous drain current (Id) of 7.5A at 25°C. The Rds(on) is specified at a maximum of 1 Ohm, with a gate-source voltage (Vgs) of 10V and drain current (Id) of 4A. Key characteristics include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1050 pF at 25V. With a maximum power dissipation of 45W (Tc), this component is housed in a TO-220SIS package for through-hole mounting. The TK8A60DA-STA4-Q-M- is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |