TK8A50D(STA4,Q,M)
MOSFET N-CH 500V 8A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK8A50D-STA4-Q-M, an N-Channel Power MOSFET from the TMOS VII series. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 8A at 25°C. The on-resistance (Rds On) is specified as a maximum of 850mOhm at 4A drain current and 10V gate-source voltage. Input capacitance (Ciss) is 800 pF maximum at 25V, with a gate charge (Qg) of 16 nC at 10V. The device is housed in a TO-220SIS through-hole package, offering a maximum power dissipation of 40W (Tc). Key parameters include a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 4V maximum at 1mA. This MOSFET is suitable for applications in power supply units, industrial automation, and general power switching.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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