TK8A25DA,S4X
PB-F POWER MOSFET TRANSISTOR TO-Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number TK8A25DA-S4X, is a through-hole device in a TO-220SIS package. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 7.5 A at 25°C (Ta), with a maximum power dissipation of 30 W (Tc). The Rds On is specified at a maximum of 500 mOhm at 3.8 A and 10 V Vgs. Key electrical parameters include a Gate Charge (Qg) of 16 nC at 10 V and an input capacitance (Ciss) of 550 pF at 100 V. The device operates at temperatures up to 150°C and supports a maximum Gate-Source Voltage (Vgs) of ±20 V. This MOSFET is suitable for applications in power supply, industrial control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 100 V |
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