TK8A10K3,S5Q
MOSFET N-CH 100V 8A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK8A10K3-S5Q, an N-Channel MOSFET from the U-MOSIV series, features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C (Ta). This through-hole component, housed in a TO-220SIS package, offers a maximum power dissipation of 18W (Tc). With a typical Rds On of 120mOhm at 4A and 10V, and a gate charge (Qg) of 12.9 nC at 10V, it is suitable for applications requiring efficient power switching. The device operates up to a junction temperature of 150°C and supports a gate-source voltage (Vgs) range of ±20V. Industries utilizing this component include power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 18W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 10 V |
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