TK80S06K3L(T6L1,NQ
MOSFET N-CH 60V 80A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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The Toshiba Semiconductor and Storage TK80S06K3L-T6L1-NQ is an N-Channel Power MOSFET from the U-MOSIV series. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C (Ta). It features a low on-resistance (Rds On) of 5.5mOhm maximum at 40A and 10V Vgs. The device has a total gate charge (Qg) of 85 nC maximum at 10V and an input capacitance (Ciss) of 4200 pF maximum at 10V. Designed for surface mounting, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as DPAK+. The maximum power dissipation is 100W at the case temperature (Tc). Operating temperature range is up to 175°C (TJ). This MOSFET is suitable for applications in industrial power supplies, automotive systems, and power management. It is supplied on a Tape & Reel (TR).
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 10 V |