TK80S04K3L(T6L1,NQ
MOSFET N-CH 40V 80A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage U-MOSIV series TK80S04K3L-T6L1-NQ is an N-Channel MOSFET engineered for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current of 80A at 25°C (Ta), with a maximum power dissipation of 100W (Tc). The low on-resistance of 3.1mOhm at 40A and 10V gate-source voltage is achieved through Toshiba's advanced U-MOS IV trench technology. Key electrical parameters include a gate charge (Qg) of 87nC (max) at 10V and input capacitance (Ciss) of 4340pF (max) at 10V. The device operates over a junction temperature range of -55°C to 175°C. It is supplied in a surface mount DPAK+ (TO-252-3, DPAK) package, presented on tape and reel. This N-Channel MOSFET is suitable for use in power switching applications across various industrial sectors.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 10 V |