TK70D06J1(Q)
MOSFET N-CH 60V 70A TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK70D06J1-Q- is a 60V N-Channel power MOSFET designed for high-current applications. Featuring a low Rds(on) of 6.4mOhm at 35A and 10V Vgs, this component offers efficient power switching. The device supports a continuous drain current of 70A at 25°C and a maximum power dissipation of 45W. It is housed in a standard TO-220(W) through-hole package, suitable for thermal management in moderate power applications. The TK70D06J1-Q- is utilized across various industries, including automotive and industrial power control systems, where robust and reliable performance is critical. Key parameters include a gate charge of 87 nC and input capacitance of 5450 pF, facilitating efficient drive circuitry design. The operating junction temperature reaches up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | TO-220(W) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 10 V |
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