TK6Q65W,S1Q
MOSFET N-CH 650V 5.8A IPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSIV series TK6Q65W-S1Q is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 5.8 A at 25°C. The device offers a low on-resistance of 1.05 Ohm maximum at 2.9 A and 10 V gate drive. With a maximum power dissipation of 60 W (Tc) and an operating junction temperature of 150°C, the TK6Q65W-S1Q is suitable for use in power supply units, lighting, and industrial motor control applications. It is packaged in a TO-251-3 Stub Leads, IPAK (TO-251AA) through-hole package, supplied in tubes. Key parameters include a gate charge (Qg) of 11 nC maximum and input capacitance (Ciss) of 390 pF maximum.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 180µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 300 V |
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